Nexperia
PMV45EN2
30 V, N-channel Trench MOSFET
aaa-013364
aaa-013365
-3
-4
-5
-6
16
10
D
3.8 V
4.5 V
10 V
I
D
I
(A)
min
typ
max
(A)
3.2 V
3.0 V
2.8 V
12
10
8
4
0
10
10
2.5 V
V
3
= 2.2 V
GS
0
1
2
4
0
0.5
1.0
1.5
2.0
V
2.5
(V)
V
(V)
DS
GS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-013366
aaa-013367
300
300
2.2 V
2.5 V
R
R
DSon
(mΩ)
DSon
(mΩ)
2.8 V
200
200
3.2 V
100
100
T = 150 °C
j
T = 25 °C
j
3.8 V
12
4.5 V
V
= 10 V
GS
0
0
0
4
8
16
0
2
4
6
8
10
(V)
I
D
(A)
V
GS
Tj = 25 °C
ID = 3.8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PMV45EN2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2017
7 / 15
NEXPERIA [ Nexperia ]
