Nexperia
PMV45EN2
30 V, N-channel Trench MOSFET
aaa-013368
aaa-009047
16
1.8
1.5
1.2
0.9
0.6
I
a
D
(A)
12
8
4
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
4
5
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-009049
aaa-009048
3
3
10
C
(pF)
V
GS(th)
(V)
C
iss
max
typ
2
10
2
1
0
C
oss
C
rss
min
10
1
-1
2
-60
0
60
120
180
10
1
10
10
T (°C)
j
V
(V)
DS
f = 1 MHz; VGS = 0 V
ID = 0.25 mA; VDS = VGS
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
©
PMV45EN2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2017
8 / 15
NEXPERIA [ Nexperia ]
