Nexperia
PMV45EN2
30 V, N-channel Trench MOSFET
aaa-013361
2
10
l
D
(A)
t
p
= 10 µs
10
t
= 100 µs
p
1
t
= 1 ms
p
2
DC; T
= 25 °C; 6 cm
amb
t
= 10 ms
= 100 ms
p
-1
DC; T = 25 °C
sp
10
10
t
p
-2
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
209
95
Max
246
112
73
Unit
K/W
K/W
K/W
K/W
[1]
[2]
[2]
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
-
-
-
in free air; t ≤ 5 s
62
Rth(j-sp)
thermal resistance
from junction to solder
point
20
25
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
©
PMV45EN2
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Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2017
4 / 15
NEXPERIA [ Nexperia ]
