Nexperia
PMEG120G20ELR
120 V, 2 A Silicon Germanium (SiGe) rectifier
aaa-030258
aaa-030259
-4
10
10
R
(A)
10
(1)
(2)
I
I
F
(A)
-5
-6
-7
-8
-9
1
(3)
10
10
10
10
-1
10
10
10
10
(4)
-2
-3
-4
(5)
-10
10
(2)
(4)
(6)
(1) (3)
(5)
-11
10
0
0.4
0.8
1.2
0
40
80
120
V
(V)
V (V)
R
F
pulsed condition
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = -40 °C
pulsed condition
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
Fig. 4. Reverse current as a function of reverse
voltage; typical values
Fig. 3. Forward current as a function of forward
voltage; typical values
aaa-030260
aaa-030261
120
2.0
P
F(AV)
(W)
(4)
C
(pF)
d
1.5
80
(3)
1.0
0.5
0
(2)
(1)
40
0
0
40
80
120
0
1
2
3
V (V)
R
I
(A)
F(AV)
f = 1 MHz; Tamb = 25 °C
Tj = 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
Fig. 5. Diode capacitance as a function of reverse
voltage; typical values
(4) δ = 1; DC
Fig. 6. Average forward power dissipation as a
function of average forward current; typical
values
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PMEG120G20ELR
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
28 February 2020
5 / 14
NEXPERIA [ Nexperia ]
