Nexperia
PMEG120G20ELR
120 V, 2 A Silicon Germanium (SiGe) rectifier
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
220
130
18
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[3]
-
-
-
-
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
aaa-030256
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.50
0.33
0.20
0.25
0.10
10
0.05
0.01
0.02
0
1
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-030257
2
10
duty cycle = 1
0.75
0.50
Z
th(j-a)
(K/W)
0.33
0.20
0.25
0.10
10
0.05
0.01
0.02
0
1
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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PMEG120G20ELR
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Nexperia B.V. 2020. All rights reserved
Product data sheet
28 February 2020
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