Nexperia
PMEG120G20ELR
120 V, 2 A Silicon Germanium (SiGe) rectifier
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 1 mA; pulsed; Tj = 25 °C
[1]
120
-
-
V
VF
forward voltage
IF = 0.1 A; Tj = 25 °C; pulsed
IF = 0.5 A; Tj = 25 °C; pulsed
IF = 1 A; Tj = 25 °C; pulsed
IF = 2 A; Tj = 25 °C; pulsed
IF = 2 A; Tj = -40 °C; pulsed
IF = 2 A; Tj = 125 °C; pulsed
VR = 120 V; Tj = 25 °C; pulsed
VR = 120 V; Tj = 125 °C; pulsed
VR = 120 V; Tj = 150 °C; pulsed
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
-
-
-
-
-
-
-
-
-
-
-
-
590
680
720
770
860
620
0.3
3.5
20
670
760
800
840
950
720
30
mV
mV
mV
mV
mV
mV
nA
µA
µA
pF
IR
reverse current
40
200
-
Cd
trr
diode capacitance
75
30
-
pF
reverse recovery time IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A;
step recovery Tj = 25 °C
6
-
ns
reverse recovery time dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V;
-
-
-
-
11
0.7
5
-
-
-
-
ns
A
ramp recovery
Tj = 25 °C
IRM
peak reverse recovery
current
Qrr
reverse recovery
charge
nC
mV
VFRM
peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
voltage
685
[1] Very short pulse, in order to maintain a stable junction temperature.
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PMEG120G20ELR
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
28 February 2020
4 / 14
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