Nexperia
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
006aab115
006aab116
600
0.20
I
(mA) = 5.0
B
4.5
3.5
2.5
I
C
h
FE
(A)
4.0
3.0
0.15
400
2.0
1.0
1.5
(1)
0.10
0.05
0.0
0.5
(2)
(3)
200
0
10
- 1
2
3
1
10
10
10
0
2
4
6
8
10
I
(mA)
V
(V)
CE
C
VCE = 1 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
Fig. 3. DC current gain as a function of collector
current; typical values
006aab117
006aab118
1.2
1.3
V
(V)
V
BE
BEsat
(V)
(1)
(2)
(1)
(2)
0.8
0.9
0.5
0.1
(3)
(3)
0.4
0
10
- 1
2
3
- 1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 1 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 5. Base-emitter voltage as a function of collector Fig. 6. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
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PMBT3904YS
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Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
5 / 10
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