Nexperia
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMBT3904YS
TSSOP6
plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363
2.1 mm x 1.25 mm x 0.95 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
BC%
PMBT3904YS
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
-
-
-
-
-
-
-
60
V
collector-emitter voltage open base
40
V
emitter-base voltage
collector current
open collector
6
V
200
200
100
230
mA
mA
mA
mW
ICM
peak collector current
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
IBM
Ptot
[1]
[1]
Per device
Ptot
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
350
150
150
150
mW
°C
Tj
-
Tamb
Tstg
-55
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
©
PMBT3904YS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
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