Nexperia
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
ICBO
collector-base cut-off
current
VCB = 30 V; IE = 0 A; Tamb = 25 °C
VEB = 6 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
50
50
nA
nA
IEBO
hFE
emitter-base cut-off
current
DC current gain
VCE = 1 V; IC = 0.1 mA; Tamb = 25 °C
VCE = 1 V; IC = 1 mA; Tamb = 25 °C
VCE = 1 V; IC = 10 mA; Tamb = 25 °C
VCE = 1 V; IC = 50 mA; Tamb = 25 °C
VCE = 1 V; IC = 100 mA; Tamb = 25 °C
IC = 10 mA; IB = 1 mA; Tamb = 25 °C
IC = 50 mA; IB = 5 mA; Tamb = 25 °C
60
180
180
180
105
50
75
120
750
850
-
-
80
-
100
300
-
60
30
-
VCEsat
collector-emitter
saturation voltage
-
200
300
850
950
35
35
70
200
50
250
4
mV
mV
mV
mV
ns
-
VBEsat
base-emitter saturation IC = 10 mA; IB = 1 mA; Tamb = 25 °C
voltage
650
IC = 50 mA; IB = 5 mA
-
-
-
-
-
-
-
-
-
td
delay time
IC = 10 mA; IBon = 1 mA; IBoff = -1 mA;
VCC = 3 V; Tamb = 25 °C
tr
rise time
-
ns
ton
ts
turn-on time
storage time
fall time
-
ns
-
ns
tf
-
ns
toff
Cc
Ce
turn-off time
collector capacitance
emitter capacitance
-
ns
VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz
-
pF
pF
VEB = 0.5 V; IC = 0 A; ic = 0 A;
Tamb = 25 °C
-
8
fT
transition frequency
noise figure
VCE = 20 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C
300
-
-
-
-
MHz
dB
NF
VCE = 5 V; IC = 100 µA; RS = 1 kΩ; f =
10 Hz to 15.7 kHz; Tamb = 25 °C
5
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PMBT3904YS
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Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
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