Nexperia
PBSS5350T-Q
50 V, 3 A PNP low VCEsat transistor
mld893
3
10
R
CEsat
(Ω)
2
10
10
1
(1)
(3)
-1
10
(2)
2
-2
10
-1
3
4
-10
-1
-10
-10
-10
-10
(mA)
I
C
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 9. Equivalent on-resistance as a function of collector current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
18-03-12
Fig. 10. Package outline SOT23
©
PBSS5350T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 May 2022
7 / 11
NEXPERIA [ Nexperia ]
