Nexperia
PBSS5350T-Q
50 V, 3 A PNP low VCEsat transistor
mld889
mld890
3
3
- 10
- 10
V
V
CEsat
CEsat
(mV)
(mV)
2
2
- 10
- 10
(1)
(2)
(3)
(1)
(3)
(2)
- 10
- 10
- 1
- 10
- 1
- 10
- 1
2
- 10
3
4
- 1
2
3
4
- 1
- 10
- 10
- 10
(mA)
- 1
- 10
- 10
- 10
- 10
I (mA)
C
I
C
IC/IB = 10
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 6. Collector-emitter saturation voltage as a
function of collector current; typical values
mld891
mld892
4
4
- 10
- 10
V
(mV)
CEsat
V
CEsat
(mV)
3
2
- 10
3
- 10
- 10
(1)
(3)
(2)
2
- 10
(1)
- 10
- 1
(3) (2)
- 10
- 1
- 10
2
3
4
- 1
2
3
I
4
- 1
- 10
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
I
C
C
IC/IB = 50
IC/IB = 100
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
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PBSS5350T-Q
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Nexperia B.V. 2022. All rights reserved
Product data sheet
10 May 2022
6 / 11
NEXPERIA [ Nexperia ]
