Nexperia
PBSS5350T-Q
50 V, 3 A PNP low VCEsat transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO
collector-base
IC = -100 µA; IE = 0 A; Tamb = 25 °C
-50
-
-
V
breakdown voltage
V(BR)CEO
V(BR)EBO
collector-emitter
breakdown voltage
IC = -10 mA; IB = 0 A; Tamb = 25 °C
IE = -100 µA; IC = 0 A; Tamb = 25 °C
-50
-6
-
-
-
-
V
V
emitter-base
breakdown voltage
(collector open)
ICBO
collector-base cut-off
current
VCB = -50 V; IE = 0 A; Tamb = 25 °C
VCB = -50 V; IE = 0 A; Tj = 150 °C
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
-100
-50
nA
µA
nA
IEBO
hFE
emitter-base cut-off
current
-100
DC current gain
VCE = -2 V; IC = -100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
200
-
-
VCE = -2 V; IC = -500 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
200
-
-
VCE = -2 V; IC = -1 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
200
-
-
VCE = -2 V; IC = -2 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
130
-
-
VCE = -2 V; IC = -3 A; pulsed; tp ≤
300 µs; Tamb = 25 °C
80
-
-
VCEsat
collector-emitter
saturation voltage
IC = -500 mA; IB = -50 mA; pulsed; tp ≤
300 µs; δ = 0.02; Tamb = 25 °C
-
-
-90
-180
-320
-270
-390
135
-1.1
-1.2
-1.2
-
mV
mV
mV
mV
mV
mΩ
V
IC = -1 A; IB = -50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
IC = -2 A; IB = -100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
IC = -2 A; IB = -200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
IC = -3 A; IB = -300 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
RCEsat
VBEsat
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
90
-
base-emitter saturation IC = -2 A; IB = -100 mA; pulsed; tp ≤
voltage
-
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -3 A; IB = -300 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
V
VBEon
fT
base-emitter turn-on
voltage
VCE = -2 V; IC = -1 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
V
transition frequency
VCE = -5 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
100
-
-
MHz
pF
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
35
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PBSS5350T-Q
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Product data sheet
10 May 2022
4 / 11
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