Nexperia
PBSS5350T-Q
50 V, 3 A PNP low VCEsat transistor
mld885
mld886
- 1200
1000
h
FE
V
BE
(mV)
800
(1)
(2)
- 800
(1)
600
400
200
0
(3)
(2)
(3)
- 400
0
- 10
- 1
2
3
I
4
- 1
2
3
I
4
- 1
- 10
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
C
C
VCE = −2 V
VCE = −2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 1. DC current gain as a function of collector
current; typical values
Fig. 2. Base-emitter voltage as a function of collector
current; typical values
mld887
mld888
- 1300
- 1300
V
V
BEsat
BEsat
(mV)
(mV)
(1)
(2)
(1)
(2)
- 900
- 900
(3)
(3)
- 500
- 100
- 500
- 100
- 1
2
3
4
- 1
2
3
4
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
- 10
I (mA)
C
I
C
IC/IB = 10
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 3. Base-emitter saturation voltage as a function of Fig. 4. Base-emitter saturation voltage as a function of
collector current; typical values
collector current; typical values
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PBSS5350T-Q
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Nexperia B.V. 2022. All rights reserved
Product data sheet
10 May 2022
5 / 11
NEXPERIA [ Nexperia ]
