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NT5CB256M16DP-FLB 参数 Datasheet PDF下载

NT5CB256M16DP-FLB图片预览
型号: NT5CB256M16DP-FLB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
AC & DC Operating Conditions  
Recommended DC Operating Conditions  
Rating  
Typ.  
Symbol  
Parameter  
Unit  
Note  
Min.  
1.425  
1.283  
Max.  
1.575  
1.45  
DDR3  
1.5  
1,2  
VDD  
Supply Voltage  
V
DDR3L  
1.35  
3,4,5,6,7  
DDR3  
1.425  
1.283  
1.5  
1.575  
1.45  
1,2  
VDDQ  
Supply Voltage for Output  
V
DDR3L  
1.35  
3,4,5,6,7  
Note:  
1. Under all conditions VDDQ must be less than or equal to VDD.  
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.  
3. Maximun DC value may not be great than 1.425V.The DC value is the linear average of VDD/ VDDQ(t) over a very long period of time  
(e.g., 1 sec).  
4. If maximum limit is exceeded, input levels shall be governed by DDR3 specifications.  
5. Under these supply voltages, the device operates to this DDR3L specification.  
6. Once initialized for DDR3 operation, DDR3L operation may only be used if the device is in reset while VDD and VDDQ are changed  
for DDR3L operation.  
7. VDD= VDDQ= 1.35V (1.2831.45V )  
Backward compatible to VDD= VDDQ= 1.5V ±0.075V  
Supports DDR3L devices to be backward com-patible in 1.5V applications  
Version 2.3  
02/2017  
91  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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