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NT5CB256M16DP-FLB 参数 Datasheet PDF下载

NT5CB256M16DP-FLB图片预览
型号: NT5CB256M16DP-FLB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
Single-ended requirements for differential signals  
Each individual component of a differential signal (CK, DQS, DQSL, DQSU, , ,L, or U) has also to comply  
with certain requirements for single-ended signals.  
CK and have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels (VIH (ac) / VIL (ac)) for  
ADD/CMD signals) in every half-cycle. DQS, DQSL, DQSU, , L have to reach VSEHmin / VSELmax (approxi-  
mately the ac-levels (VIH (ac) / VIL (ac)) for DQ signals) in every half-cycle proceeding and following a valid transition.  
Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g., if VIH150  
(ac)/VIL150(ac) is used for ADD/CMD signals, then these ac-levels apply also for the single ended signals CK and   
Version 2.3  
02/2017  
101  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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