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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
AC & DC operating conditions  
Timing Parameters (Data rate 1600,1866,2133 specifications and conditions)  
DDR3(L)-1600  
DDR3(L)-1866  
DDR3-2133  
Parameter  
Symbol  
Unit  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Clock Timing  
Minimum Clock Cycle Time (DLL off mode) tCK (DLL_off)  
8
-
8
-
8
-
ns  
Average Clock Period  
Average high pulse width  
Average low pulse width  
tCK(avg)  
tCH(avg)  
tCL(avg)  
Refer to “Speed Bin”section  
0.47  
0.47  
0.53  
0.53  
0.47  
0.47  
0.53  
0.53  
0.47  
0.47  
0.53  
0.53  
tCK(avg)  
tCK(avg)  
Min.: tCK(avg)min + tJIT(per)min  
Max.: tCK(avg)max + tJIT(per)max  
Absolute Clock Period  
tCK(abs)  
Absolute clock HIGH pulse width  
Absolute clock LOW pulse width  
Clock Period Jitter  
tCH(abs)  
tCL(abs)  
JIT(per)  
0.43  
0.43  
-70  
-
-
70  
0.43  
0.43  
-60  
-
-
60  
0.43  
0.43  
-50  
-
-
50  
tCK(avg)  
tCK(avg)  
ps  
Clock Period Jitter during DLL locking  
period  
Cycle to Cycle Period Jitter  
Cycle to Cycle Period Jitter during DLL  
locking period  
Duty Cycle Jitter  
Cumulative error across n = 2, 14 . . . 49, 50  
cycles  
JIT(per, lck)  
tJIT(cc)  
-60  
60  
-50  
50  
-40  
40  
ps  
140  
120  
120  
100  
100  
80  
JIT(cc, lck)  
tJIT(duty)  
tERR(nper)  
-
-
-
-
-
-
ps  
ps  
tERR(nper) min = (1 + 0.68ln(n)) * tJIT(per)min  
tERR (nper) max = (1 + 0.68ln(n)) * tJIT (per)max  
Data Timing  
DQS,  to DQ skew, per group, per  
access  
tDQSQ  
-
100  
-
85  
-
75  
ps  
DQ output hold time from DQS,   
DQ low-impedance time from CK,   
DQ high impedance time from CK,   
tQH  
0.38  
-450  
-
-
0.38  
-390  
-
-
0.38  
-360  
-
-
tCK(avg)  
tLZ(DQ)  
tHZ(DQ)  
tDS(base)  
DDR3-1600  
(AC175)  
225  
225  
195  
195  
180  
180  
ps  
ps  
-
-
-
-
-
-
-
-
-
ps  
ps  
DDR3-1866/2133  
(AC150)  
tDS(base)  
DDR3-1600  
(AC150)  
10  
68  
53  
Data setup time to DQS,  referenced to  
Vih(ac) / Vil(ac) levels  
DDR3-1866/2133  
(AC135)  
tDS(base)  
DDR3L-1600  
(AC135)  
SR=1V/ns  
25  
45  
-
-
70  
70  
-
-
-
-
-
ps  
ps  
DDR3L-1866  
(AC130)  
SR=2V/ns  
tDH(base)  
DC100  
DDR3-1600  
SR=1V/ns  
55  
DDR3-1866/2133  
SR=2V/ns  
Data hold time from DQS,  referenced  
to  
Vih(dc) / Vil(dc) levels  
tDH(base)  
DC90  
DDR3L-1600  
SR=1V/ns  
DDR3L-1866  
SR=2V/ns  
55  
-
-
75  
-
-
-
-
-
ps  
ps  
DQ and DM Input pulse width for each input tDIPW  
360  
320  
280  
Data Strobe Timing  
DQS, differential READ Preamble  
DQS,  differential READ Postamble  
DQS,  differential output high time  
DQS,  differential output low time  
tRPRE  
tRPST  
tQSH  
tQSL  
0.9  
0.3  
0.4  
0.4  
Note 19  
Note 11  
0.9  
0.3  
0.4  
0.4  
Note 19  
Note 11  
0.9  
0.3  
0.4  
0.4  
Note 19 tCK(avg)  
Note 11 tCK(avg)  
-
-
-
-
-
-
tCK(avg)  
tCK(avg)  
Version 1.4  
05/2019  
136  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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