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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Register Definition  
Programming the Mode Registers  
For application flexibility, various functions, features, and modes are programmable in four Mode Registers, provided by the  
DDR3(L) SDRAM, as user defined variables and they must be programmed via a Mode Register Set (MRS) command. As  
the default values of the Mode Registers (MR#) are not defined, contents of Mode Registers must be fully initialized and/or  
re-initialized, i.e. written, after power up and/or reset for proper operation. Also the contents of the Mode Registers can be  
altered by re-executing the MRS command during normal operation. When programming the mode registers, even if the  
user chooses to modify only a sub-set of the MRS fields, all address fields within the accessed mode register must be  
redefined when the MRS command is issued. MRS command and DLL Reset do not affect array contents, which mean  
these commands can be executed any time after power-up without affecting the array contents.  
The mode register set command cycle time, tMRD is required to complete the write operation to the mode register and is the  
minimum time required between two MRS commands shown as below.  
tMRD Timing  
CK  
CK  
CMD  
ADDR  
CKE  
MRS  
VAL  
NOP  
NOP  
NOP  
NOP  
MRS  
VAL  
tMRD  
Do not  
Care  
Time break  
The MRS command to Non-MRS command delay, tMOD, is require for the DRAM to update the features except DLL reset,  
and is the minimum time required from an MRS command to a non-MRS command excluding NOP and DES shown as the  
following figure.  
Version 1.4  
05/2019  
13  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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