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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Burst Length, Type, and Order  
Accesses within a given burst may be programmed to sequential or interleaved order. The burst type is selected via bit A3  
as shown in the MR0 Definition as above figure. The ordering of access within a burst is determined by the burst length,  
burst type, and the starting column address. The burst length is defined by bits A0-A1. Burst lengths options include fix  
BC4, fixed BL8, and on the fly which allow BC4 or BL8 to be selected coincident with the registration of a Read or Write  
command via A12/.  
Burst Type and Burst Order  
Starting  
Column  
Address  
(A2,A1,A0)  
Burst type:  
Sequential  
(decimal)  
A3 = 0  
Burst type:  
Interleaved  
(decimal)  
A3 = 1  
Burst  
Length  
Read  
Write  
Note  
0,0,0  
0,0,1  
0,1,0  
0,1,1  
1,0,0  
1,0,1  
1,1,0  
1,1,1  
0,V,V  
1,V,V  
0,0,0  
0,0,1  
0,1,0  
0,1,1  
1,0,0  
1,0,1  
1,1,0  
1,1,1  
V,V,V  
0,1,2,3,T,T,T,T  
1,2,3,0,T,T,T,T  
2,3,0,1,T,T,T,T  
3,0,1,2,T,T,T,T  
4,5,6,7,T,T,T,T  
5,6,7,4,T,T,T,T  
6,7,4,5,T,T,T,T  
7,4,5,6,T,T,T,T  
0,1,2,3,X,X,X,X  
4,5,6,7,X,X,X,X  
0,1,2,3,4,5,6,7  
1,2,3,0,5,6,7,4  
2,3,0,1,6,7,4,5  
3,0,1,2,7,4,5,6  
4,5,6,7,0,1,2,3  
5,6,7,4,1,2,3,0  
6,7,4,5,2,3,0,1  
7,4,5,6,3,0,1,2  
0,1,2,3,4,5,6,7  
0,1,2,3,T,T,T,T  
1,0,3,2,T,T,T,T  
2,3,0,1,T,T,T,T  
3,2,1,0,T,T,T,T  
4,5,6,7,T,T,T,T  
5,4,7,6,T,T,T,T  
6,7,4,5,T,T,T,T  
7,6,5,4,T,T,T,T  
0,1,2,3,X,X,X,X  
4,5,6,7,X,X,X,X  
0,1,2,3,4,5,6,7  
1,0,3,2,5,4,7,6  
2,3,0,1,6,7,4,5  
3,2,1,0,7,6,5,4  
4,5,6,7,0,1,2,3  
5,4,7,6,1,0,3,2  
6,7,4,5,2,3,0,1  
7,6,5,4,3,2,1,0  
0,1,2,3,4,5,6,7  
Read  
Write  
1,2,3  
4
Chop  
1,2,4,5  
Read  
Write  
2
8
2,4  
Note:  
1. In case of burst length being fixed to 4 by MR0 setting, the internal write operation starts two clock cycles earlier than the BL8  
mode. This means that the starting point for tWR and tWTR will be pulled in by two clocks. In case of burst length being selected  
on-the-fly via A12/, the internal write operation starts at the same point in time like a burst of 8 write operation. This means that  
during on-the-fly control, the starting point for tWR and tWTR will not be pulled in by two clocks.  
2. 0~7 bit number is value of CA [2:0] that causes this bit to be the first read during a burst.  
3. T: Output driver for data and strobes are in high impedance.  
4. V: a valid logic level (0 or 1), but respective buffer input ignores level on input pins.  
5. X: Do not Care.  
Version 1.4  
05/2019  
16  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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