TYPICAL CHARACTERISTICS
15
10
5
1000
C
oss
C
100
iss
C
rss
V
V
= 10 Vdc
DS
V
= 0 Vdc
GS
= 2.3 Vdc
GS(th)
f = 1 MHz
0
10
0
1
2
3
4
5
6
0
5
10
15
20
25
30
V
, GATE–SOURCE VOLTAGE (VOLTS)
V
, DRAIN–SOURCE VOLTAGE (VOLTS)
GS
DS
Figure 6. Drain Current versus Gate Voltage
Figure 7. Capacitance versus Voltage
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.94
I
= 7 A
D
5 A
T
= 25°C
C
3 A
10
1 A
V
= 12.5 Vdc
DD
0.5 A
1
–25
0
25
50
75
100
125
150
175
1
10
, DRAIN–SOURCE VOLTAGE (VOLTS)
100
T
, CASE TEMPERATURE (
°C)
V
DS
C
Figure 8. Gate–Source Voltage versus
Case Temperature
Figure 9. DC Safe Operating Area
Table 1. Series Equivalent Input and Output Impedance
= 12.5 Vdc, I = 400 mA, P = 55 W PEP
V
DD
DQ out
Optimized for Efficiency and IM Performance
f
Z
Z
OL*
Ohms
in
MHz
Ohms
54
6.50 + j7.96
1.27 + j1.54
Z
= Conjugate of the optimum load impedance into which the device
OL*
operates at a given power, voltage and frequency.
MRF255
4
MOTOROLA RF DEVICE DATA
MOTOROLA [ MOTOROLA ]
