ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V = 0, I = 20 mAdc)
V
36
—
—
—
—
—
—
Vdc
mAdc
µAdc
(BR)DSS
GS
Zero Gate Voltage Drain Current
(V = 15 Vdc, V = 0)
D
I
5.0
5.0
DSS
GSS
DS GS
Gate–Source Leakage Current
(V = 20 Vdc, V = 0)
I
GS DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
1.25
—
2.3
—
3.5
0.4
—
Vdc
Vdc
S
GS(th)
(V
DS
= 10 Vdc, I = 25 mAdc)
D
Drain–Source On–Voltage
(V = 10 Vdc, I = 4.0 Adc)
V
DS(on)
GS
Forward Transconductance
(V = 10 Vdc, I = 3.0 Adc)
D
g
fs
4.2
—
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
140
285
38
—
—
44
pF
pF
pF
iss
(V
DS
= 12.5 Vdc, V
= 0, f = 1.0 MHz)
GS
Output Capacitance
(V = 12.5 Vdc, V
C
oss
= 0, f = 1.0 MHz)
DS
GS
Reverse Transfer Capacitance
(V = 12.5 Vdc, V = 0, f = 1.0 MHz)
C
rss
DS GS
FUNCTIONAL TESTS (In Motorola Test Fixture.)
Common Source Amplifier Power Gain, f = 54, f = 54.001 MHz
G
13
—
40
—
16
–30
45
—
–25
—
dB
dBc
%
1
2
ps
(V
DD
= 12.5 Vdc, P
out
= 55 W (PEP), I
DQ
= 400 mA)
Intermodulation Distortion (1), f = 54.000 MHz, f = 54.001 MHz
IMD
(d3,d5)
1
2
(V
DD
= 12.5 Vdc, P
out
= 55 W (PEP), I
= 400 mA)
DQ
Drain Efficiency, f = 54; f = 54.001 MHz
η
1
2
(V
DD
= 12.5 Vdc, P
= 55 W (PEP), I
= 400 mA)
out
DQ
Drain Efficiency, f = 54 MHz
(V = 12.5 Vdc, P = 55 W CW, I
η
60
—
%
= 400 mA)
Output Mismatch Stress, f = 54; f = 54.001 MHz
DD out DQ
ψ
1
2
No Degradation in Output Power
Before and After Test
(V
DD
= 12.5 Vdc, P
out
= 55 W (PEP), I = 400 mA,
DQ
VSWR = 20:1, at all phase angles)
(1) To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
MRF255
2
MOTOROLA RF DEVICE DATA
MOTOROLA [ MOTOROLA ]
