V58C2128(804/404/164)S
Half strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
90
Maximum
80
70
60
Typical High
50
40
Typical Low
Minimum
30
20
10
0
0.0
1.0
2.0
Vout(V)
3. Thenominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
0.0
0.5
1.0
1.5
2.0
2.5
0
-10
-20
Minumum
-30
-40
-50
-60
Typical Low
Typical High
Maximum
-70
-80
-90
VDDQ
— Vout(V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2
Figure 26. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V) Typical Low
0.1 3.4
Typical High
3.8
Minimum
2.6
Maximum
5.0
Typical Low Typical High
-3.5 -4.3
Minimum
-2.6
Maximum
-5.0
V58C2128(804/404/164)S Rev. 1.6 March 2002
45
MOSEL [ MOSEL VITELIC, CORP ]
