V58C2128(804/404/164)S
IBIS: I/V Characteristics for Input and Output Buffers
Normal strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
Maximum
160
140
120
Typical High
100
80
Typical Low
60
Minimum
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
Vout(V)
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
0.0
0.5
1.0
1.5
2.0
2.5
0
-20
Minumum
-40
Typical Low
-60
-80
-100
-120
-140
-160
-180
-200
-220
Typical High
Maximum
VDDQ
— Vout(V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages from
0 to VDDQ/2
Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
0.1
Typical Low Typical High
6.0 6.8
Minimum
4.6
Maximum
9.6
Typical Low Typical High
-6.1 -7.6
Minimum
-4.6
Maximum
-10.0
V58C2128(804/404/164)S Rev. 1.6 March 2002
43
MOSEL [ MOSEL VITELIC, CORP ]
