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V58C2128804S 参数 Datasheet PDF下载

V58C2128804S图片预览
型号: V58C2128804S
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能2.5伏128兆位的DDR SDRAM [HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 59 页 / 922 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V58C2128(804/404/164)S  
43. Note 43 is not used.  
44. During initialization, VDDQ, VTT, and VREF must be equal to or less than VDD + 0.3V. Alternatively, VTT may  
be 1.35V maximum during power up, even if VDD /VDDQ are 0 volts, provided a minimum of 42 ohms of series re-  
sistance is used between the VTT supply and the input pin.  
45. Note 45 is not used.  
t
46. RAP •t RCD.  
47. Note 47 is not used.  
48. Random addressing changing 50% of data changing at every transfer.  
49. Random addressing changing 100% of data changing at every transfer.  
50. CKE must be active (high) during the entire time a refresh command is executed. That is, from the time the AUTO  
t
REFRESH command is registered, CKE must be active at each rising clock edge, until REF later.  
51. IDD2N specifies the DQ, DQS, and DM to be driven to a valid high or low logic level. IDD2Q is similar to IDD2F  
except IDD2Q specifies the address and control inputs to remain stable. Although IDD2F, IDD2N, and IDD2Q are  
similar, IDD2F is “worst case.”  
52. Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset. This is followed  
by 200 clock cycles.  
0
0
0
0
0
0
0
0
0
0
Minimum  
-20  
Nominal low  
-40  
-60  
Nominal low  
-80  
Minimum  
-100  
-120  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
V58C2128(804/404/164)S Rev. 1.6 March 2002  
42  
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