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V58C2128804S 参数 Datasheet PDF下载

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型号: V58C2128804S
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能2.5伏128兆位的DDR SDRAM [HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 59 页 / 922 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V58C2128(804/404/164)S  
DC Operating Conditions & Specifications  
DC Operating Conditions  
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)  
Parameter  
Supply voltage (for device with a nominal VDD of 2.5V)  
I/O Supply voltage  
Symbol  
VDD  
Min  
2.3  
Max  
2.7  
Unit  
Note  
VDDQ  
VREF  
VTT  
2.3  
2.7  
V
V
I/O Reference voltage  
0.49*VDDQ  
VREF-0.04  
VREF+0.15  
-0.3  
0.51*VDDQ  
VREF+0.04  
VDDQ+0.3  
VREF-0.15  
VDDQ+0.3  
VDDQ+0.6  
2
1
2
I/O Termination voltage(system)  
Input logic high voltage  
V
VIH(DC)  
V
Input logic low voltage  
VIL(DC)  
VIN(DC)  
VID(DC)  
II  
V
Input Voltage Level, CK and CK inputs  
Input Differential Voltage, CK and CK inputs  
Input leakage current  
-0.3  
V
0.3  
V
3
-2  
uA  
uA  
mA  
mA  
Output leakage current  
IOZ  
-5  
5
Output High Current (VOUT = 1.95V)  
Output Low Current (VOUT = 0.35V)  
IOH  
-16.8  
16.8  
IOL  
Notes: 1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same. Peak-  
to-peak noise on VREF may not exceed 2% of the DC value  
2.VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to  
V
REF, and must track variations in the DC level of VREF  
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.  
Table 11. DC operating condition  
V58C2128(804/404/164)S Rev. 1.6 March 2002  
33  
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