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V58C2128804S 参数 Datasheet PDF下载

V58C2128804S图片预览
型号: V58C2128804S
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能2.5伏128兆位的DDR SDRAM [HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 59 页 / 922 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V58C2128(804/404/164)S  
AC Operating Conditions & Timming Specification  
AC Operating Conditions  
Parameter/Condition  
Symbol  
VIH(AC)  
VIL(AC)  
VID(AC)  
VIX(AC)  
Min  
Max  
Unit  
V
Note  
Input High (Logic 1) Voltage, DQ, DQS and DM signals  
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.  
Input Differential Voltage, CK and CK inputs  
VREF + 0.31  
1
2
3
4
VREF - 0.31  
VDDQ+0.6  
V
0.62  
V
Input Crossing Point Voltage, CK and CK inputs  
0.5*VDDQ-0.2  
0.5*VDDQ+0.2  
V
Note:  
1.Vih(max) = 4.2V. The overshoot voltage duration is < 3ns at VDD.  
2. Vil(min) = -1.5V. The undershoot voltage duration is < 3ns at VSS.  
3. VID is the magnitude of the difference between the input level on CK and the input on CK.  
4. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.  
ELECTRICAL CHARACTERISTICS AND AC TIMING for PC333/PC266/PC200 -Absolute  
Specifications  
(Notes: 1-5, 14-17) (0°C < T < 70°C; V Q = +2.5V ±0.2V, +2.5V ±0.2V)  
A
DD  
AC CHARACTERISTICS  
-6  
-7  
-75  
-8  
SYM-  
BOL  
PARAMETER  
MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES  
Access window of DQs from CK/CK  
CK high-level width  
tAC  
tCH  
-0.7  
0.45  
0.45  
6
0.7  
0.55  
0.55  
12  
-0.75 0.75 -0.75 0.75  
-0.8  
0.8  
ns  
tCK  
tCK  
ns  
0.45  
0.45  
7
0.55  
0.55  
12  
0.45  
0.45  
7.5  
0.55 0.45 0.55  
0.55 0.45 0.55  
30  
30  
52  
52  
CK low-level width  
tCL  
Clock cycle time  
CL = 2.5  
CL = 2  
tCK (2.5)  
tCK (2)  
12  
12  
8
12  
12  
7.5  
12  
7.5  
12  
10  
10  
ns  
DQ and DM input hold time relative to  
DQS  
tDH  
tDS  
0.45  
0.45  
1.5  
0.5  
0.5  
0.5  
0.5  
0.6  
0.6  
2
ns  
ns  
ns  
26,31  
26,31  
31  
DQ and DM input setup time relative to  
DQS  
DQ and DM input pulse width (for each in-  
put)  
tDIPW  
1.75  
1.75  
Access window of DQS from CK/CK  
DQS input high pulse width  
DQS input low pulse width  
tDQSCK -0.6  
0.6  
-0.75 0.75 -0.75 0.75  
-0.8  
0.35  
0.35  
0.8  
0.6  
ns  
tDQSH  
tDQSL  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
tCK  
tCK  
DQS-DQ skew, DQS to last DQ valid,  
per group, per access  
tDQSQ  
tDQSS  
0.45  
1.25  
0.5  
0.5  
ns  
25,26  
Write command to first DQS latching tran-  
sition  
0.75  
0.2  
0.75  
0.2  
1.25  
0.75  
0.2  
1.25 0.75 1.25  
tCK  
tCK  
tCK  
DQS falling edge to CK rising - setup time tDSS  
0.2  
0.2  
DQS falling edge from CK rising - hold  
tDSH  
0.2  
0.2  
0.2  
time  
Half clock period  
tHP  
tCH,  
tCL  
tCH,  
tCL  
tCH,  
tCL  
tCH,  
tCL  
ns  
34  
V58C2128(804/404/164)S Rev. 1.6 March 2002  
35  
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