ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA55H3847M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
80
OUTPUT POWER P
out
(W)
70
INPUT VSWR
ρ
in
(-)
60
50
40
30
20
10
0
370 380 390 400 410 420 430 440 450 460 470 480
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
P
out
2
nd
, 3
rd
HARMONICS versus FREQUENCY
-30
HARMONICS (dBc)
-40
-50
-60
-70
3
rd
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
80
70
60
50
40
30
20
10
0
FREQUENCY f(MHz)
TOTAL EFFICIENCY
η
T
(%)
η
T
ρ
in
-80
370 380 390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
20
16
12
8
60
50
40
30
20
10
0
-10
-5
0
5
I
DD
f=410MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
24
20
16
12
8
4
0
20
DRAIN CURRENT
I
DD
(A)
DRAIN CURRENT I
DD
(A)
40
30
20
I
DD
10
0
-10
f=380MHz,
V
DD
=12.5V,
V
GG
=5V
4
0
-5
0
5
10
15
INPUT POWER P
in
(dBm)
20
10
15
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
20
10
0
-10
-5
0
5
I
DD
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
20
16
12
8
60
50
40
30
20
10
0
-10
-5
0
5
I
DD
P
out
Gp
24
20
16
12
8
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
f=440MHz,
V
DD
=12.5V,
V
GG
=5V
4
0
20
4
0
20
10
15
10
15
INPUT POWER P
in
(dBm)
INPUT POWER P
in
(dBm)
RA55H3847M
MITSUBISHI ELECTRIC
3/8
12 Jun 2007
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
