ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA55H3847M
RATING
17
6
100
65
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=380-470MHz,
Z
G
=Z
L
=50Ω
Note.1.The above parameters are independently guaranteed.
Note.2.In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is
recommended to keep lower than 90°C under all conditions, and to keep lower than 60°C under standard conditions.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
3f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
rd
CONDITIONS
MIN
380
55
38
TYP
MAX
470
UNIT
MHz
W
%
Harmonic
3 Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
-40
-50
3:1
1
dBc
—
mA
—
—
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<65W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=55W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or
destroy
Note. All parameters, conditions, ratings, and limits are subject to change without notice.
RA55H3847M
MITSUBISHI ELECTRIC
2/8
12 Jun 2007
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
