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RA55H3847M-101 参数 Datasheet PDF下载

RA55H3847M-101图片预览
型号: RA55H3847M-101
PDF下载: 下载PDF文件 查看货源
内容描述: 射频MOSFET模块380-470MHz 55W 12.5V , 3级放大器。对于移动电 [RF MOSFET MODULE 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO]
分类和应用: 放大器射频
文件页数/大小: 8 页 / 242 K
品牌: MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
 浏览型号RA55H3847M-101的Datasheet PDF文件第1页浏览型号RA55H3847M-101的Datasheet PDF文件第2页浏览型号RA55H3847M-101的Datasheet PDF文件第3页浏览型号RA55H3847M-101的Datasheet PDF文件第5页浏览型号RA55H3847M-101的Datasheet PDF文件第6页浏览型号RA55H3847M-101的Datasheet PDF文件第7页浏览型号RA55H3847M-101的Datasheet PDF文件第8页  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA55H3847M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110
100
90
80
70
60
50
40
30
20
10
0
2
OUTPUT POWER P
out
(W)
f=380MHz,
V
GG
=5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
24
22
20
18
16
14
12
10
8
6
4
2
0
120
110
100
90
80
70
60
50
40
30
20
10
0
2
f=410MHz,
V
GG
=5V,
P
in
=50mW
P
out
P
out
I
DD
I
DD
24
22
20
18
16
14
12
10
8
6
4
2
0
16
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110
100
90
80
70
60
50
40
30
20
10
0
2
f=440MHz,
V
GG
=5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
24
22
20
18
16
14
12
10
8
6
4
2
0
120
110
100
90
80
70
60
50
40
30
20
10
0
2
f=470MHz,
V
GG
=5V,
P
in
=50mW
P
out
P
out
I
DD
I
DD
24
22
20
18
16
14
12
10
8
6
4
2
0
16
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
OUTPUT POWER P
out
(W)
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
OUTPUT POWER P
out
(W)
OUTPUT POWER P
out
(W)
90
80
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
DD
f=380MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
18
16
DRAIN CURRENT I
DD
(A)
14
12
10
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
DD
f=410MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
18
16
14
12
10
8
6
4
2
0
DRAIN CURRENT I
DD
(A)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
DD
f=440MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
18
16
DRAIN CURRENT I
DD
(A)
14
12
10
8
6
4
2
0
OUTPUT POWER P
out
(W)
90
80
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
DD
f=470MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
18
16
14
12
10
8
6
4
2
0
DRAIN CURRENT I
DD
(A)
RA55H3847M
MITSUBISHI ELECTRIC
4/8
12 Jun 2007
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)