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RA55H3847M-101 参数 Datasheet PDF下载

RA55H3847M-101图片预览
型号: RA55H3847M-101
PDF下载: 下载PDF文件 查看货源
内容描述: 射频MOSFET模块380-470MHz 55W 12.5V , 3级放大器。对于移动电 [RF MOSFET MODULE 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO]
分类和应用: 放大器射频
文件页数/大小: 8 页 / 242 K
品牌: MITSUBISHI [ Mitsubishi Group ]
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MITSUBISHI RF MOSFET MODULE  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RA55H3847M  
RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO  
BLOCK DIAGRAM  
DESCRIPTION  
The RA55H3847M is a 55-watt RF MOSFET Amplifier  
Module for 12.5-volt mobile radios that operate in the 380- to  
470-MHz range.  
2
3
The battery can be connected directly to the drain of the  
enhancement-mode MOSFET transistors. Without the gate  
voltage (VGG=0V), only a small leakage current flows into the  
drain and the RF input signal attenuates up to 60 dB. The  
output power and drain current increase as the gate voltage  
increases. With a gate voltage around 4V (minimum), output  
power and drain current increases substantially. The nominal  
output power becomes available at 4.5V (typical) and 5V  
(maximum). At VGG=5V, the typical gate current is 1 mA.  
This module is designed for non-linear FM modulation, but  
may also be used for linear modulation by setting the drain  
quiescent current with the gate voltage and controlling the  
output power with the input power.  
1
4
5
1
2
3
4
5
RF Input (Pin)  
Gate Voltage (VGG), Power Control  
Drain Voltage (VDD), Battery  
RF Output (Pout  
)
FEATURES  
RF Ground (Case)  
• Enhancement-Mode MOSFET Transistors  
(IDD0 @ VDD=12.5V, VGG=0V)  
PACKAGE CODE: H2S  
• Pout>55W, ηT>38% @ VDD=12.5V, VGG=5V, Pin=50mW  
• Broadband Frequency Range: 380-470MHz  
• Low-Power Control Current IGG=1mA (typ) at VGG=5V  
• Module Size: 66 x 21 x 9.88 mm  
• Linear operation is possible by setting the quiescent drain  
current with the gate voltage and controlling the output power  
with the input power  
RoHS COMPLIANCE  
• RA55H3847M-101 is a RoHS compliant products.  
• RoHS compliance is indicate by the letter “G” after the Lot Marking.  
• This product include the lead in the Glass of electronic parts and the  
lead in electronic Ceramic parts.  
However, it is applicable to the following exceptions of RoHS  
Directions.  
1.Lead in the Glass of a cathode-ray tube, electronic parts, and  
fluorescent tubes.  
2.Lead in electronic Ceramic parts.  
ORDERING INFORMATION:  
ORDER NUMBER  
RA55H3847M-101  
SUPPLY FORM  
Antistatic tray,  
10 modules/tray  
RA55H3847M  
12Jun 2007  
MITSUBISHI ELECTRIC  
1/8  
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