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M5M51008DFP-70H 参数 Datasheet PDF下载

M5M51008DFP-70H图片预览
型号: M5M51008DFP-70H
PDF下载: 下载PDF文件 查看货源
内容描述: 1048576 - BIT ( 131072 -字×8位)的CMOS静态RAM [1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 63 K
品牌: MITSUBISHI [ Mitsubishi Group ]
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Ver. 1.1  
MITSUBISHI LSIs  
M5M51008DFP,VP,RV,KV,KR -55H, -70H  
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM  
FUNCTION  
The operation mode of the M5M51008D series are determined by  
a combination of the device control inputs S1,S2,W and OE.  
Each mode is summarized in the function table.  
When setting S1 at a high level or S2 at a low level, the chip are in  
a non-selectable mode in which both reading and writing are  
disabled. In this mode, the output stage is in a high- impedance  
state, allowing OR-tie with other chips and memory expansion by  
S1 and S2. The power supply current is reduced as low as the  
stand-by current which is specified as ICC3 or ICC4, and the memory  
data can be held at +2V power supply, enabling battery back-up  
operation during power failure or power-down operation in the non-  
selected mode.  
A write cycle is executed whenever the low level W overlaps with  
the low level S1 and the high level S2. The address must be set up  
before the write cycle and must be stable during the entire cycle.  
The data is latched into a cell on the trailing edge of W,S1 or  
S2,whichever occurs first,requiring the set-up and hold time relative  
to these edge to be maintained. The output enable input OE  
directly controls the output stage. Setting the OE at a high level,  
the output stage is in a high-impedance state, and the data bus  
contention problem in the write cycle is eliminated.  
A read cycle is executed by setting W at a high level and OE at a  
low level while S1 and S2 are in an active state(S1=L,S2=H).  
FUNCTION TABLE  
Mode  
DQ  
ICC  
S1 S2  
W
X
X
L
OE  
X
X
H
L
L
Stand-by  
Non selection High-impedance  
X
H
X
Non selection High-impedance Stand-by  
Din  
Dout  
Active  
Active  
Active  
X
Write  
Read  
L
L
H
H
H
H
L
H
High-impedance  
BLOCK DIAGRAM  
*
*
DQ1  
13  
14  
15  
21  
22  
23  
A3  
9
17  
18  
15  
DQ2  
DQ3  
A2 10  
131072 WORDS  
X 8 BITS  
(512 ROWS  
X128 COLUMNS  
X 16BLOCKS)  
A5  
7
DATA  
INPUTS/  
OUTPUTS  
17  
18  
19  
25  
26  
27  
DQ4  
DQ5  
DQ6  
A6  
A7  
6
5
14  
13  
12  
11  
10  
7
A12  
A14  
A16  
A15  
4
28  
29  
20 DQ7  
21 DQ8  
3
2
31  
ADDRESS  
INPUTS  
CLOCK  
GENERATOR  
A13  
A8  
28  
27  
26  
25  
4
3
2
1
A9  
A11  
WRITE  
CONTROL  
INPUT  
29  
W
5
A4  
8
16  
19  
20  
31  
30  
6
22  
30  
S1  
S2  
CHIP  
SELECT  
INPUTS  
A1 11  
A0  
12  
A10 23  
OUTPUT  
ENABLE  
INPUT  
32  
8
24 OE  
32 VCC  
GND  
(0V)  
16  
24  
* Pin numbers inside dotted line show those of TSOP  
MITSUBISHI  
ELECTRIC  
2
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