< IGBT MODULES >
CM100TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
T
j
=25 °C
200
(Chip)
3.5
V
GE
=15 V
(Chip)
V
GE
=20 V
15 V
13.5 V
12 V
3
T
j
=150 °C
T
j
=125 °C
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE
(V)
I
C
(A)
150
2.5
COLLECTOR CURRENT
11 V
100
2
1.5
10 V
T
j
=25 °C
1
50
9V
0.5
0
0
2
4
6
8
10
0
0
50
100
150
200
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T
j
=25 °C
10
(Chip)
1000
G-E short-circuited
(Chip)
T
j
=125 °C
8
I
C
=200 A
I
E
(A)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE
(V)
I
C
=100 A
6
100
I
C
=40 A
4
EMITTER CURRENT
T
j
=150 °C
T
j
=25 °C
10
2
0
6
8
10
12
14
16
18
20
1
0
0.5
1
1.5
2
2.5
3
GATE-EMITTER VOLTAGE
V
GE
(V)
EMITTER-COLLECTOR VOLTAGE
V
EC
(V)
Publication Date : September 2012
6
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
