< IGBT MODULES >
CM100TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T
j
=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol
V
CES
V
GES
I
C
I
CRM
P
tot
I
E
I
ERM
(Note1)
(Note1)
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
G-E short-circuited
C-E short-circuited
DC, T
C
=119 °C
Pulse, Repetitive
T
C
=25 °C
(Note2)
(Note2, 4)
(Note2, 4)
Conditions
Rating
1200
± 20
100
200
750
100
Unit
V
V
A
W
A
(Note3)
Pulse, Repetitive
Item
(Note3)
200
Rating
2500
175
125
-40 ~ +150
-40 ~ +125
MODULE
Symbol
V
isol
T
jmax
T
Cmax
T
jop
T
stg
Isolation voltage
Maximum junction temperature
Maximum case temperature
Operating junction temperature
Storage temperature
Conditions
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Instantaneous event (overload)
(Note4)
Unit
V
°C
°C
°C
Continuous operation (under switching)
-
ELECTRICAL CHARACTERISTICS (T
j
=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol
I
CES
I
GES
V
GE(th)
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Conditions
V
CE
=V
CES
, G-E short-circuited
V
GE
=V
GES
, C-E short-circuited
I
C
=10 mA, V
CE
=10 V
I
C
=100 A
V
GE
=15 V,
V
CEsat
Collector-emitter saturation voltage
(Terminal)
I
C
=100 A
V
GE
=15 V,
(Chip)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
CC
=600 V, I
C
=100 A, V
GE
=15 V
V
CC
=600 V, I
C
=100 A, V
GE
=±15 V,
R
G
=6.2
Ω,
Inductive load
I
E
=100 A
(Terminal)
I
E
=100 A
(Chip)
t
rr
Q
rr
E
on
E
off
E
rr
(Note1)
(Note1)
(Note1)
(Note5)
(Note5)
(Note5)
(Note5)
Limits
Min.
-
-
5.4
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
6.0
1.80
2.00
2.05
1.70
1.90
1.95
-
-
-
233
-
-
-
-
1.80
1.80
1.80
1.70
1.70
1.70
-
5.3
8.6
10.7
10.2
-
0
Max.
1.0
0.5
6.6
2.25
-
-
2.15
-
-
10
2.0
0.17
-
300
200
600
300
2.25
-
-
2.15
-
-
300
-
-
-
-
3.5
-
Unit
mA
μA
V
V
,
,
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
V
V
CE
=10 V, G-E short-circuited
nF
nC
ns
,
G-E short-circuited,
V
EC
(Note1)
V
Emitter-collector voltage
,
G-E short-circuited,
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
V
CC
=600 V, I
E
=100 A, V
GE
=±15 V,
R
G
=6.2
Ω,
Inductive load
V
CC
=600 V, I
C
=I
E
=100 A,
V
GE
=±15 V, R
G
=6.2
Ω,
T
j
=150 °C,
Inductive load
Main terminals-chip, per switch,
T
C
=25 °C
Per switch
(Note4)
V
ns
μC
mJ
mJ
mΩ
Ω
R
CC'+EE'
r
g
Publication Date : September 2012
2
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
