< IGBT MODULES >
CM100TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Limits
Typ.
600
Symbol
VCC
Item
(DC) Supply voltage
Conditions
Unit
Min.
-
Max.
850
Applied across P-N terminals
V
V
Ω
Applied across GB-EsB/
VGEon
RG
Gate (-emitter drive) voltage
External gate resistance
13.5
6.2
15.0
-
16.5
62
G*P-Es*P/G*N-Es*N (*=U, V, W) terminals
Per switch
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: FWDi (*=U/V/W), DiBr: ClampDi, Th: NTC thermistor
TEST CIRCUIT AND WAVEFORMS
vGE
iE
90 %
0
P1
P
*:U, V, W
0 V
iE
Qrr=0.5×Irr×trr
t
Load
G*P
Es*
-VGE
IE
trr
+
VCC
iC
*
0 A
90 %
t
RG
vGE
Irr
+VGE
-VGE
vCE
0.5×Irr
G*N
0 V
iC
10%
tf
Es*N
N1
0 A
tr
t
N
td( o n)
td ( of f )
Switching characteristics test circuit and waveforms
trr, Qrr test waveform
IEM
iE
vEC
iC
iC
ICM
ICM
VCC
vCE
vCE
VCC
VCC
t
t
0 A
0 V
0.1×VCC
0.1×ICM
0.02×ICM
0.1×VCC
0
t
t
0
ti
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : September 2012
4
MITSUBISHI [ Mitsubishi Group ]
