< IGBT MODULES >
CM100TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
P1
P
P1
P
P1
P
V
GE
=15 V
GUP
EsUP
U
I
C
V
GE
=15 V
GVP
EsVP
V
I
C
V
GE
=15 V
GWP
EsWP
W
I
C
V
Short-
ci rcuited
GUN
EsUN
N1
V
Short-
ci rcuited
GVN
EsVN
V
Short-
ci rcuited
GWN
EsW
N
N1
N
N1
N
N
28~30
54~56
28~30
54~56
28~30
54~56
Short-
circuited
1
2
48~50
Short-
circuited
9
10
42~44
Short-
circuited
17
18
36~38
V
V
GE
=15 V
V
V
GE
=15 V
V
V
GE
=15 V
5
6
23~25
59~61
I
C
13
14
23~25
59~61
I
C
21
22
23~25
59~61
I
C
Gate-emitter GVP-EsVP, GVN-EsVP,
short-circuited GWP-EsWN, GWN-EsWN
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GWP-EsWP, GWN-EsWN
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GVP-EsVP, GVN-EsVN
UP / UN IGBT
VP / VN IGBT
WP / WN IGBT
V
C E s a t
test circuit
28~30
54~56
28~30
54~56
28~30
54~56
Short-
ci rcuited
1
2
I
E
48~50
Short-
ci rcuited
9
10
I
E
42~44
Short-
ci rcuited
17
18
I
E
36~38
V
Short-
ci rcuited
5
6
23~25
V
Short-
ci rcuited
13
14
V
Short-
ci rcuited
21
22
59~61
23~25
59~61
23~25
59~61
P1
P
P1
P
P1
P
Short-
circuited
GUP
EsUP
U
Short-
circuited
GVP
EsVP
V
Short-
circuited
GWP
EsWP
W
V
Short-
circuited
V
Short-
circuited
V
Short-
circuited
GUN
EsUN
N1
N
I
E
GVN
EsVN
N1
N
I
E
GWN
EsWN
N1
N
I
E
Gate-emitter GVP-EsVP, GVN-EsVP,
short-circuited GWP-EsWN, GWN-EsWN
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GWP-EsWP, GWN-EsWN
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GVP-EsVP, GVN-EsVN
UP / UN FWDi
VP / VN FWDi
WP / WN FWDi
V
EC
/ V
F
test circuit
Publication Date : September 2012
5
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
