MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
140
120
100
80
60
40
20
0
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
I QUADRANT
TYPICAL EXAMPLE
T
j
= 125°C
III QUADRANT
COMMUTATION CHARACTERISTICS
10
2
7
5
3
2
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
V
D
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
10
1
7
5
MINIMUM
TYPICAL
EXAMPLE
T
j
= 125°C
I
T
= 4A
τ
= 500µs
V
D
= 200V
f = 3Hz
III QUADRANT
CHARAC-
3
TERISTICS
2
VALUE
10
0
7
3
5
I QUADRANT
7
10
1
2
3
5
7
10
2
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
100 (%)
10
3
7
5
3
2
TYPICAL EXAMPLE
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
I
FGT I
I
RGT I
I
RGT III
10
2
7
5
3
2
10
1 0
10
2
3
5 7
10
1
2
3
5 7
10
2
GATE TRIGGER PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
V
A
330Ω
6V
V
A
330Ω
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
330Ω
TEST PROCEDURE
3
Mar. 2002
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
