MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR20AM
OUTLINE DRAWING
Dimensions in mm
10.5 MAX.
4.5
➃
16
MAX.
3.2
±
0.2
7.0
1.3
12.5
MIN.
3.8 MAX.
TYPE
NAME
VOLTAGE
CLASS
φ
3.6
±
0.2
1.0
0.8
E
2.5
2.5
4.5
0.5
2.6
➀➁➂
➁➃
�½
Measurement point of
case temperature
................................................................ 20A
q
V
DRM
................................................................. 600V
q
I
FGT
!
, I
RGT
!
, I
RGT
#
.................................... 20mA
q
I
T (RMS)
➀
➀
T
1
TERMINAL
➁
T
2
TERMINAL
➂
GATE TERMINAL
➂
➃
T
2
TERMINAL
TO-220
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
�½1
Non-repetitive peak off-state
voltage
�½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360°
60Hz sinewave 1 full cycle, peak value, non-repetitive
conduction, Tc=109°C
�½3
Ratings
20
200
167
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Mar. 2002
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
�½1.
Gate open.
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
