MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
The product guaranteed maximum junction
temperature 150°C (See warning.)
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate trigger
current
�½2
Parameter
Repetitive peak off-state current
On-state voltage
!
Test conditions
T
j
=125°C/150°C, V
DRM
applied
T
c
=25°C, I
TM
=30A
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Limits
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0/3.0
1.5
1.5
1.5
1.5
20
20
20
—
0.8
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
Gate trigger
voltage
�½2
@
#
!
@
#
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=125°C/150°C, V
D
=1/2V
DRM
Junction to case
�½3 �½4
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
�½5
Tj=125��C/150°C
�½2.
Measurement using the gate trigger characteristics measurement circuit.
�½3.
Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
�½4.
The contact thermal resistance R
th (c-f)
in case of greasing is 1°C/W.
�½5.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in he table below.
Test conditions
1. Junction temperature
T
j
=125°C/150°C
2. Rate of decay of on-atate commutating current
(di/dt)
c
=–10A/ms
3. Peak off-state voltage
V
D
=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
(di/dt)
c
TIME
TIME
V
D
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)
c
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
10
3
240
RATED SURGE ON-STATE
CURRENT
SURGE ON-STATE CURRENT (A)
7
5
ON-STATE CURRENT (A)
3
2
200
160
120
80
40
0
10
0
10
2
7
5
3
2
T
j
= 150°C
10
1
7
5
3
2
T
j
= 25°C
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2
3
5 7
10
1
2
3
5 7
10
2
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
