MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
10
2
7
5
3
2
V
GM
= 10V
100 (%)
GATE CHARACTERISTICS
(Ι,
ΙΙ
AND
ΙΙΙ)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
TYPICAL EXAMPLE
10
1
7
5
3
V
GT
= 1.5V
2
P
GM
= 5W
P
G(AV)
=
0.5W
I
GM
=
2A
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
GATE VOLTAGE (V)
10
2
7
5
3
2
I
FGT I
I
RGT I
I
RGT III
10
0
7
5
3
2
10
1
7
5
3
2
I
FGT I,
I
RGT I,
I
RGT III
V
GD
= 0.2V
10
–1 1
10
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
GATE CURRENT (mA)
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TRANSIENT THERMAL IMPEDANCE (°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 57
10
2
2 3 57
10
3
CONDUCTION TIME
(CYCLES AT 60Hz)
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
40
CURVES APPLY REGARDLESS
140 OF CONDUCTION ANGLE
30 360°
CONDUCTION
RESISTIVE,
INDUCTIVE
20 LOADS
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
5
10
15
10
0
0
5
10
15
20
25
30
20
25
30
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
