MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
The product guaranteed maximum junction
temperature 150°C (See warning.)
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
NATURAL CONVECTION
120
100
80
60
40
REGARDLESS
CURVES APPLY
OF CONDUCTION
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
140
120
100
80
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
LOADS
160 160 t 2.3
100 100 t 2.3
60 60 t 2.3
20
ANGLE, RESISTIVE,
0
INDUCTIVE LOADS
0
5
10
15
20
25
30
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
5
3
2
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
TYPICAL EXAMPLE
100 (%)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
TYPICAL EXAMPLE
IH(typ) = 20mA
7
5
3
2
10
3
7
5
3
2
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
10
3
10
2
7
5
4
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
10
3
7
5
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Mar. 2002
LACHING CURRENT (mA)
DISTRIBUTION
3
2
10
2
7
5
3
2
10
1
7
5
3
2
+
T
2
, G
+
TYPICAL
–
T
2
, G
–
EXAMPLE
10
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
T
2
, G
TYPICAL
EXAMPLE
+
–
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
