EEPROM
AS8E512K8
Austin Semiconductor, Inc.
PAGE MODE CHARACTERISTICS
PARAMETER
SYMBOL
MIN
MAX
UNITS
Address, OE\ Setup Time
10
ns
tAS, tOES
Address Hold Time
50
0
ns
ns
ns
ns
ns
ns
tAH
tCS
Chip Select Setup Time
Chip Select Hold Time
Write Pulse Width (WE\ or CE\)
Data Setup Time
0
tCH
100
50
10
tWP
tDS
Data, OE\ Hold Time
tDH, tOEH
PAGE MODE WRITE WAVEFORMS(1,2,3)
OE\
CE\
tBLC
tWPH
tWP
WE\
tAS
tAH
VALID ADDR
A0-A18
tDH
tDS
VALID DATA
DATA
BYTE 126
BYTE 0
BYTE 1
BYTE 2
BYTE 3
BYTE 127
tWC
NOTES: 1. A7 through A16 must specify the page address during each high to low transition of WE (or CE).
2. OE must be high only when WE and CE are both low.
3. A17 and A18 must remain valid throughout the WE\ and CE\ low.
CHIP ERASE WAVEFORMS
VIH
CE\
VIL
VH
OE\
tS
tH
VIH
VIH
VIL
NOTES:
WE\
tS = 5µsec (min)
tW= tH= 10 msec (min)
VH=12.0 V +/- 0.5 V
tw
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8E512K8
Rev. 2.0 12/99
6
MICROSS [ MICROSS COMPONENTS ]
