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5962-9309104HYC 参数 Datasheet PDF下载

5962-9309104HYC图片预览
型号: 5962-9309104HYC
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM Module, 512KX8, 200ns, Parallel, CMOS, DIP-32]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 13 页 / 148 K
品牌: MICROSS [ MICROSS COMPONENTS ]
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EEPROM  
AS8E512K8  
Austin Semiconductor, Inc.  
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC READ OPERATING  
CONDITIONS (-55oC<TA<+125oC;Vcc = 5V +10%)  
A.C. READ WAVEFORMS(1,2,3,4)  
ADDRESS  
CE\  
ADDRESS VALID  
tCE  
tOE  
OE\  
tDF  
tOH  
tACC  
HIGH Z  
OUTPUT  
VALID  
OUTPUT  
NOTES:  
3. tDF is specified from OE\ or CE\ whichever occurs first  
(CL = 5pF).  
4. This parameter is characterized and is not 100% tested.  
5. A17 and A18 must remain valid through the WE\ and CE\  
low pulse.  
1. CE\ may be delayed up to tACC-tCE after the address transi-  
tion without inpact on tACC  
.
2. OE\ may be delayed up to tCE-tOE after the falling edge of  
CE\ without inpact on tCE or by tACC-tOE after an address  
change without inpact on tACC  
.
INPUT TEST WAVEFORMS AND MEASUREMENT  
LEVEL FOR AC TEST CONDITIONS  
OUTPUT TEST LOAD  
5.0V  
Input Pulse Levels  
Input Rise and Fall Times  
Input and Output  
0V to 3.0V  
5nS  
1.8K  
1.5V  
100pF  
1.3K  
Timing Reference Levels  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8E512K8  
Rev. 2.0 12/99  
4
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