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5962-9309104HYC 参数 Datasheet PDF下载

5962-9309104HYC图片预览
型号: 5962-9309104HYC
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM Module, 512KX8, 200ns, Parallel, CMOS, DIP-32]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 13 页 / 148 K
品牌: MICROSS [ MICROSS COMPONENTS ]
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EEPROM  
AS8E512K8  
Austin Semiconductor, Inc.  
ABSOLUTE MAXIMUM RATINGS*  
Voltage on Vcc Supply Relative to Vss  
*Stresses greater than those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. This is  
a stress rating only and functional operation of the device at  
these or any other conditions above those indicated in the  
operation section of this specification is not implied. Exposure  
to absolute maximum rating conditions for extended periods  
may affect reliability.  
Supply/Input Voltage Range1.........................-0.6V to +6.25V DC  
Voltage on OE\ and A9....................................-0.6V to +13.5V DC  
Voltage on all other pins..................................-0.6V to +6.25V DC  
Storage Temperature.............................................-65°C to +150°C  
Operating Temperature, TA (Ambient)................-55oC to +125oC  
Lead Temperature (soldering 10 seconds)........................+300oC  
Maximum Junction Temperature**....................................+165°C  
NOTE: 1. Including NC pins, with respect to ground.  
** Junction temperature depends upon package type, cycle  
time, loading, ambient temperature and airflow.  
PIN CAPACITANCE (f= 1MHz, T = 25° C)(1)  
SYMBOL  
CONDITIONS  
MAX  
UNIT  
CADD, OE\, WE\  
VIN = 0V, f = 1MHz  
45  
50  
10  
pF  
CI/O  
VOUT = 0V, f = 1MHz  
VIN = 0V, f = 1MHz  
pF  
pF  
CCE\  
OPERATING MODES  
MODE  
CE\  
OE\  
WE\  
I/O  
Read  
VIL  
VIL  
VIH  
VIL  
X
DOUT  
Write2  
VIL  
VIH  
X
VIH  
DIN  
X1  
X
Standby/Write Inhibit  
High Z  
Write Inhibit  
Write Inhibit  
VIH  
X
X
VIL  
Output Disable  
X
X
High Z  
VIH  
NOTE: 1. X can be VIL or VIH.  
2. Refer to AC Programming Waveforms.  
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS  
(-55oC<TA<+125oC;Vcc = 5V +10%)  
PARAMETER  
CONDITION  
SYMBOL  
MIN  
MAX  
UNITS  
Input Load Current  
-20  
20  
VIN = OV to Vcc + 1V  
ILI  
µΑ  
Output Leakage Current  
Vcc Standby Current CMOS  
Vcc Standby Current TTL  
Vcc Active Current  
-20  
20  
VI/O = OV to Vcc  
CE\ = Vcc -0.2V to Vcc + 1  
CE\ = 2.2V to Vcc + 1  
F = 5 MHz; IOUT = 0 mA  
ILO  
ISB1  
ISB2  
ICC  
µΑ  
mA  
mA  
mA  
V
20  
120  
0.8  
Input Low Voltage  
VIL  
Input High Voltage  
2
V
VIH  
I
OL = 2.1 mA  
Output Low Voltage  
0.45  
V
VOL  
VOH1  
VOH2  
IOH = -400 µA  
Output High Voltage  
Output High Voltage CMOS  
2.4  
4.2  
V
IOH = -100 µA; Vcc = 4.5V  
V
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8E512K8  
Rev. 2.0 12/99  
3
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