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5962-9309104HYC 参数 Datasheet PDF下载

5962-9309104HYC图片预览
型号: 5962-9309104HYC
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM Module, 512KX8, 200ns, Parallel, CMOS, DIP-32]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 13 页 / 148 K
品牌: MICROSS [ MICROSS COMPONENTS ]
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EEPROM  
AS8E512K8  
Austin Semiconductor, Inc.  
SOFTWARE PROTECTED PROGRAM CYCLE WAVEFORM(1,2,3,4)  
OE\  
CE\  
tBLC  
tWPH  
tWP  
WE\  
tAS  
tAH  
BYTE ADDRESS  
A0-A6  
A7-A18  
DATA  
5555  
2AAA  
5555  
PAGE ADDRESS  
BYTE 0  
tDH  
tDS  
AA  
A0  
55  
BYTE 126  
BYTE 127  
tWC  
NOTES: 1. A0-A14 must conform to the addressing sequence for the first three bytes as shown above.  
2. After the command sequence has been issued and a page write operation follows, the page address inputs  
(A7-A18) must be the same for each high to low transition of WE\ (or CE\).  
3. OE\ Must be high only when WE\ and CE\ are both low.  
4. A17 and A18 must remain valid throughout the WE\ and CE\ low cycle.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8E512K8  
Rev. 2.0 12/99  
8
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