128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Electrical Specifications – DC Current and Voltage Characteris-
tics and Operating Conditions
Table 35: DC Current Characteristics and Operating Conditions (Continued)
1.7 V - 2.0 V
Litho
(nm)
Density
(Mbit)
Parameter
Symbol
Conditions
Typ
Max
Unit
Notes
VPP blank check
current
IPPBC
VPP = VPPL = VPPH; Blank
check in progress
–
–
0.05
0.10
mA
3
Automatic Power Savings
Automatic pow-
er
savings
ICCAPS
VCC = VCC,max; VCCQ
VCCQ,max; CE# = VSSQ
RST# = VCCQ; All inputs
are at rail-to-rail (VCCQ
=
;
90
65
256
512
35
50
95
120
µA
–
128
256
512
45
50
60
70
115
130
160
185
or VSSQ
)
1024
45
128
256
512
18
18
18
20
100
100
100
140
1024
1. All currents are RMS unless noted. Typical values at typical VCCQ, TC = +25°C.
Notes:
2. ICCS is the average current measured over any 5ms time interval 5µs after CE# is de-asser-
ted.
3. Sampled, not 100% tested.
4. VCC read + program current is the sum of VCC read and VCC program currents. VCC read +
erase current is the sum of VCC read and VCC erase currents.
5. ICCW, ICCE is measured over typical or max times specified in Program and Erase Charac-
teristics.
6. ICCES is specified with the device deselected. If the device is read while in erase suspend,
current is ICCES + ICCR
.
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
59
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