128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Electrical Specifications – DC Current and Voltage Characteris-
tics and Operating Conditions
Table 35: DC Current Characteristics and Operating Conditions (Continued)
1.7 V - 2.0 V
Litho
(nm)
Density
(Mbit)
Parameter
Symbol
Conditions
Typ
Max
Unit
Notes
Average VCC
read current;
Sychronous burst
read; f = 108
MHz; LC = 10;
Burst = 8-word
Burst = 16-word;
Burst = Continu-
ous
ICCR
VCC = VCC,max; CE# = VIL;
OE# = VIH; Inputs: VIL
or VIH
–
–
26
23
30
36
30
42
mA
1, 3, 4
Average VCC
read current;
Sychronous burst
read; f = 133
MHz; LC = 13;
Burst = 8-word
Burst = 16-word;
Burst = Continu-
ous
ICCR
VCC = VCC,max; CE# = VIL;
OE# = VIH; Inputs: VIL
or VIH
–
–
26
24
33
35
33
46
mA
1, 3, 4
VCC Program, Erase, Blank Check
VCC Program
VCC Erase
VCC Blank Check
ICCW
ICCE
ICCBC
ICCWS
ICCES
,
,
VPP = VPPL or VPP
VPPH; Program/erase in
progress
=
–
–
35
50
mA
µA
1, 3, 4,
5
VCC Program sus-
pend
VCC Erase sus-
pend
,
CE# = VCCQ; Suspend in
progress
90
65
256
512
35
50
95
120
1, 3, 6
128
256
512
45
50
60
70
115
130
160
185
1024
45
–
128
256
512
18
18
18
20
100
100
100
140
1024
VPP Program, Read, Erase, Blank Check, Standby
VPP standby cur-
rent; VPP pro-
gram suspend
current; VPP
erase suspend
current
IPPS
IPPWS
IPPES
,
VPP = VPPL; Suspend in
progress
–
0.2
5
µA
3
,
VPP read
IPPR
VPP ≤ VCC
–
–
–
–
2
15
µA
3
3
VPP program cur-
rent
IPPW
VPP = VPPL = VPPH; Pro-
gram in progress
0.05
0.10
mA
VPP erase current
IPPE
VPP = VPPL = VPPH; Erase
in progress
–
–
0.05
0.10
mA
3
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
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58
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