128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Electrical Specifications – DC Current and Voltage Characteris-
tics and Operating Conditions
Electrical Specifications – DC Current and Voltage Characteristics and
Operating Conditions
Table 35: DC Current Characteristics and Operating Conditions
1.7 V - 2.0 V
Litho
(nm)
Density
(Mbit)
Parameter
Symbol
Conditions
Typ
Max
Unit
Notes
Input Load, Output Leakage, Standby
Input load
current
ILI
VCC = VCC,max; VCCQ
VCCQ,max; VIN = VCCQ or
VSS
=
–
–
–
–
–
±1
µA
1
Output leakage
current
ILO
VCC = VCC,max; VCCQ
VCCQ,max; VIN = VCCQ or
VSS
=
–
±1
µA
µA
1
VCC standby
ICCS
ICCD
,
VCC = VCC,max; VCCQ
VCCQ,max; CE# = VCCQ
RST# = VCCQ or GND
(for ICCS); WP# = VIH
=
;
90
65
256
512
35
50
95
120
1, 2
128
256
512
45
50
60
70
115
130
160
185
1024
45
128
256
512
18
18
18
20
100
100
100
140
1024
Average VCC Read
Average VCC
read current;
Asychronous sin-
gle-word read; f
= 5 MHz; 1 CLK
ICCR
VCC = VCC,max; CE# = VIL;
OE# = VIH; Inputs: VIL
or VIH
–
–
–
–
25
30
mA
mA
1, 3, 4
1, 3, 4
Average VCC
read current;
Page mode read;
f = 13 MHz; 17
CLK; Burst = 16-
word
ICCR
VCC = VCC,max; CE# = VIL;
OE# = VIH; Inputs: VIL
or VIH
11
15
Average VCC
read current;
Sychronous burst
read; f = 66 MHz;
LC = 7;
ICCR
VCC = VCC,max; CE# = VIL;
OE# = VIH; Inputs: VIL
or VIH
–
–
22
19
25
32
26
34
mA
1, 3, 4
Burst = 8-word
Burst = 16-word;
Burst = Continu-
ous
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
57
© 2011 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
