128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Electrical Specifications
Electrical Specifications
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only. Exposure to absolute maximum rating and operating conditions for
extended periods may adversely affect reliability. Stressing the device beyond the abso-
lute maximum ratings may cause permanent damage. These are stress ratings only.
Table 33: Absolute Maximum Ratings
Parameter
Min
–30
Max
85
Units
°C
Notes
Temperature under bias (TA)
Storage temperature (TA)
VPP voltage
5
–65
125
°C
5
–2.0
–2.0
–2.0
–0.2
–
11.5
V
1, 2, 3
VCC voltage
VCCQ + 2.0
VCCQ + 2.0
VCCQ + 2.0
80
V
1
2
1
3
4
3
Voltage on any input/output signal (except VCC, VCCQ, and VPP)
VCCQ voltage
V
V
VPPH time
hours
mA
Cycles
Output short circuit current
Block Program/Erase Cycles: Main Blocks
–
100
100,000
–
1. Voltages shown are specified with respect to VSS. During transitions, the voltage poten-
tial between VSS and input/output and supply pins may undershoot to –1.0V for periods
less than 20ns and may overshoot to VCC Q(max) + 1.0V for periods less than 20ns.
Notes:
2. Voltages shown are specified with respect to VSS. During transitions, the voltage poten-
tial between VSS and supply pins may undershoot to –2.0V for periods less than 20ns and
may overshoot to VCC (max) + 2.0V for periods less than 20ns.
3. Operation beyond this limit may degrade performance.
4. Output shorted for no more than one second; no more than one output shorted at a
time.
5. Temperature specified is ambient (TA), not case (TC).
Table 34: Operating Conditions
Symbol
TC
Parameter
Min
–30
1.7
1.7
0.9
8.5
Max
85
Units
Notes
Operating temperature
VCC supply voltage
°C
V
1
VCC
2.0
2.0
2.0
9.5
VCCQ
VPPL
I/O supply voltage
V
VPP voltage supply (logic level)
Factory programming VPP
V
VPPH
V
1. TC = Case temperature, not ambient.
Note:
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
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