P30-65nm
Table 21: DC Current Characteristics (Sheet 2 of 2)
CMOS Inputs
(VCCQ =
1.7V - 3.6V)
TTL Inputs
(VCCQ =
2.4V - 3.6V)
Symb
Parameter
Unit
mA
Test Conditions
Notes
3
Typ
Max
Typ
Max
0.05
0.05
0.10
0.10
0.05
0.05
0.10
0.10
VPP = V
VPP = V
erase in progress
erase in progress
PPL,
I
VPP Blank Check
PPBC
PPH,
Notes:
1.
2.
3.
4.
5.
All currents are RMS unless noted. Typical values at typical VCC, T = +25°C.
C
I
is the average current measured over any 5ms time interval 5µs after CE# is deasserted.
CCS
Sampled, not 100% tested.
I
I
is specified with the device deselected. If device is read while in erase suspend, current is I
CCW CCE
plus I
.
CCR
CCES
, I
measured over typical or max times specified in Section 15.5, “Program and ECraCEsSe
Characteristics” on page 59.
6.
7.
If V > VCC the input load current increases to 10µA max.
IN
the I
I
I
will increase to 200µA when VPP/WP# is at V
.
PPH
PPS, PPWS, PPES
14.2
DC Voltage Characteristics
Table 22: DC Voltage Characteristics
(1)
CMOS Inputs
(VCCQ = 1.7V – 3.6V)
TTL Inputs
(VCCQ = 2.4V – 3.6V)
Sym
-
Parameter
-
Unit
-
Test Conditions
Notes
Min
Max
Min
Max
-
-
V
Input Low Voltage
Input High Voltage
-0.5
0.4
-0.5
2.0
0.6
V
V
-
-
IL
2
V
VCCQ – 0.4
VCCQ + 0.5
VCCQ + 0.5
IH
VCC = VCC Min
V
Output Low Voltage
Output High Voltage
-
0.2
-
-
0.2
-
V
V
VCCQ = VCCQ Min
-
-
OL
I
= 100µA
OL
VCC = VCC Min
VCCQ = VCCQ Min
V
VCCQ – 0.2
VCCQ – 0.2
OH
I
= –100µA
OH
V
PPL
K
VPP Lock-Out Voltage
VCC Lock Voltage
-
0.4
-
0.4
V
V
V
-
-
-
3
-
V
V
1.0
0.9
-
-
1.0
0.9
-
-
LKO
LKO
Q
VCCQ Lock Voltage
-
Notes:
1.
2.
Synchronous read mode is not supported with TTL inputs.
V
can undershoot to –1.0V for durations of 2ns or less, and V can overshoot to VCCQ + 1.0V for durations of 2ns or
IL
IH
less.
3.
VPP ≤ V
inhibits erase and program operations. Do not use V
and V
outside their valid ranges
PPLK
PPL
PPH .
Datasheet
48
Sept 2012
Order Number: 208042-06
MICRON [ MICRON TECHNOLOGY ]
