P30-65nm
14.0
Electrical Specifications
14.1
DC Current Characteristics
Table 21: DC Current Characteristics (Sheet 1 of 2)
CMOS Inputs
(VCCQ =
1.7V - 3.6V)
TTL Inputs
(VCCQ =
2.4V - 3.6V)
Symb
Parameter
Unit
Test Conditions
Notes
Typ
Max
Typ
Max
512-Mbit/
1-Gbit
VCC = V Max
-
-
-
±1
±2
±1
-
-
-
±2
±4
CC
I
Input Load Current
µA
µA
VCCQ = VCCQ Max
LI
V
= VCCQ or V
IN
SS
2-Gbit
1,6
Output Leakage
Current
512-Mbit/
1-Gbit
VCC = VCC Max
VCCQ = VCCQ Max
= VCCQ or V
±10
I
LO
V
IN
SS
DQ[15:0], WAIT
2-Gbit
512-Mbit
1-Gbit
-
±2
225
240
-
±20
225
240
70
75
70
75
VCC = VCC Max
VCCQ = VCC Max
CE# =VCCQ
I
I
,
VCC Standby,
Power-Down
CCS
µA
1,2
RST# = VCCQ (for I
)
CCS
)
CCD
RST# = V (for I
SS
IH
CCD
2-Gbit
150
26
480
31
150
26
480
31
WP# = V
Asynchronous Single-
Word f = 5MHz (1 CLK)
16-Word
Read
mA
mA
Page-Mode Read
f = 13MHz (17 CLK)
16-Word
Read
VCC = VCC
CE# = V
IL
12
19
16
16
22
18
12
19
16
16
22
18
Max
Average
VCC Read
Current
I
mA 8-Word Read
1
OE# = V
IH
CCR
Inputs: V or
V
IL
16-Word
Read
Synchronous Burst
f = 52MHz, LC=4
mA
IH
Continuous
Read
21
24
21
24
mA
35
35
70
75
50
50
35
35
70
75
50
50
VPP = V , Pgm/Ers in progress
1,3,5
1,3,5
PPL
I
I
VCC Program Current,
VCC Erase Current
CCW,
mA
µA
CCE
VPP = V
, Pgm/Ers in progress
PPH
VCC Program Suspend
Current,
VCC Erase
Suspend Current
512-Mbit
1-Gbit
225
240
225
240
I
CCWS
,
CE# = VCCQ; suspend in
progress
1,3,4
1,3,7
I
CCES
2-Gbit
75
240
75
240
VPP Standby Current,
VPP Program Suspend
Current,
VPP Erase Suspend
Current
512-Mbit
1-Gbit
0.2
0.2
5
5
0.2
0.2
5
5
I
PPS,
I
PPWS
,
µA
VPP = V , suspend in progress
PPL
2-Gbit
0.4
10
0.4
10
IPPES
I
VPP Read
2
15
2
15
µA
VPP = V
VPP = V
VPP = V
VPP = V
VPP = V
1,3
3
PPR
PPL
0.05
0.05
0.05
0.05
0.10
0.10
0.10
0.10
0.05
0.05
0.05
0.05
0.10
0.10
0.10
0.10
program in progress
program in progress
erase in progress
erase in progress
PPL,
PPH,
PPL,
PPH,
I
VPP Program Current
mA
PPW
I
V
Erase Current
PP
mA
3
PPE
Datasheet
47
Sept 2012
OrderNumber:208042-06
MICRON [ MICRON TECHNOLOGY ]
