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N25Q512A13GF840E 参数 Datasheet PDF下载

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型号: N25Q512A13GF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, Multiple I/O Serial Flash Memory  
READ MEMORY Operations  
Table 26: Command/Address/Data Lines for READ MEMORY Commands – 4-Byte Address (Contin-  
ued)  
Notes 1 and 2 apply to entire table  
Command Name (4-Byte Address)  
DUAL  
QUAD  
FAST  
DUAL OUTPUT INPUT/OUTPUT QUAD OUTPUT INPUT/OUTPUT  
READ  
03/13  
READ  
FAST READ  
3B/3C  
FAST READ  
BB/BC  
FAST READ  
6B/6C  
FAST READ  
EB/EC  
STR Mode  
0B/0C  
0D  
DTR Mode  
3D  
BD  
6D  
ED  
Quad SPI Protocol  
Supported  
No  
Yes  
No  
No  
Yes  
Yes  
Command Input  
Address Input  
Data Output  
DQ[3:0]  
DQ[3:0]  
DQ[3:0]  
DQ[3:0]  
DQ[3:0]  
DQ[3:0]  
DQ[3:0]  
DQ[3:0]  
DQ[3:0]  
1. Yes in the "Supported' row for each protocol indicates that the command in that col-  
umn is supported; when supported, a command's functionality is identical for the entire  
column regardless of the protocol. For example, a FAST READ functions the same for all  
three protocols even though its data is input/output differently depending on the pro-  
tocol.  
Notes:  
2. Command codes 13, 0C, 3C, BC, 6C, and EC do not need to be set up in the addressing  
mode; they will work directly in 4-byte addressing mode.  
3. A 4-BYTE FAST READ command is similar to 4-BYTE READ operation, but requires dum-  
my clock cycles following the address bytes and can operate at a higher frequency (fC).  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
46  
© 2011 Micron Technology, Inc. All rights reserved.  
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